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NE32484A-SL 데이터 시트보기 (PDF) - NEC => Renesas Technology

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NE32484A-SL HETERO JUNCTION FIELD EFFECT TRANSISTOR NEC
NEC => Renesas Technology NEC
NE32484A-SL Datasheet PDF : 12 Pages
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NE32484A
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product.
Please consult with our sales offices in case other soldering process is used, or in case soldering is done under
different conditions.
<TYPES OF SURFACE MOUNT DEVICE>
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL”
(C10535EJ7V0IF00).
Soldering process
Infrared ray reflow
Partial heating method
Soldering conditions
Peak package’s surface temperature: 230 ˚C or below,
Reflow time: 30 seconds or below (210 ˚C or higher),
Number of reflow process: 1, Exposure limitNote: None
Terminal temperature: 230 ˚C or below,
Flow time: 10 seconds or below,
Exposure limitNote: None
Symbol
IR30-00
Note Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25 ˚C and relative humidity at 65 % or less.
Caution Do not apply more than a single process at once, except for “Partial heating method”.
PRECAUTION Avoid high static voltage and electric fields, because this device is Hetero Junction field effect
transistor with shottky barrier gate.
Caution
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the Japanese law concerned and so on, especially in case of removal.
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