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NE32484A-SL 데이터 시트보기 (PDF) - NEC => Renesas Technology

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NE32484A-SL HETERO JUNCTION FIELD EFFECT TRANSISTOR NEC
NEC => Renesas Technology NEC
NE32484A-SL Datasheet PDF : 12 Pages
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NE32484A
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
SYMBOL
IGSO
IDSS
VGS(off)
gm
NF
Ga
MIN.
15
–0.2
45
10.0
TYP.
0.5
40
–0.8
60
0.6
11.0
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
250
200
150
100
50
MAX.
10
70
–2.0
0.7
UNIT
µA
mA
V
mS
dB
dB
TEST CONDITIONS
VGS = –3 V
VDS = 2 V, VGS = 0 V
VDS = 2 V, ID = 100 µA
VDS = 2 V, ID = 10 mA
VDS = 2 V, ID = 10 mA,
f = 12 GHz
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
50
VGS = 0 V
40
–0.2 V
30
–0.4 V
20
–0.6 V
10
0
50
100 150 200 250
TA - Ambient Temperature - ˚C
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
50
VDS = 2 V
40
30
20
0
1
2
3
4
5
VDS - Drain to Source Voltage - V
MAXIMUM AVAILABLE GAIN, FORWARD
INSERTION GAIN vs. FREQUENCY
24
VDS = 2 V
ID = 10 mA
20
MSG.
16
|S21S|2
12
MAG.
10
0
–2.0
–1.0
VGS - Gate to Source Voltage - V
Gain Calculations
MSG. = | S21|
| S12 |
( ) MAG. = | S21| K ± K2 1
| S12 |
8
4
0
1
2
4 6 8 10 14 20 30
f - Frequency - GHz
K = 1 + | |2 | S11 |2 | S22 |2
2 | S12 || S21 |
= S11S22 S21S12
2
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