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NE32484A-SL 데이터 시트보기 (PDF) - NEC => Renesas Technology

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NE32484A-SL HETERO JUNCTION FIELD EFFECT TRANSISTOR NEC
NEC => Renesas Technology NEC
NE32484A-SL Datasheet PDF : 12 Pages
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DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE32484A
C to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE32484A is a Hetero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for DBS,
TVRO and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz
• Gate Length : Lg 0.25 µm
• Gate Width : Wg = 200 µm
ORDERING INFORMATION
PART NUMBER
NE32484A-SL
NE32484A-T1
NE32484A-T1A
SUPPLYING
FORM
STICK
Tape & reel
1000 pcs./reel
Tape & reel
5000 pcs./reel
LEAD LENGTH MARKING
L = 1.7 mm MIN.
L = 1.0 ± 0.2 mm
T
L = 1.0 ± 0.2 mm
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDS
4.0
V
Gate to Source Voltage
VGS
–3.0
V
Drain Current
ID
IDSS
mA
Gate Current
IG
100
µA
Total Power Dissipation
Ptot
165
mW
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg –65 to +150 ˚ C
RECOMMENDED OPERATING CONDITION (TA = 25 ˚C)
PACKAGE DIMENSIONS
(Unit: mm)
1.78 ±0.2
1
L
L
T
2
4
L
L
3
0.5 TYP.
1. Source
2. Drain
3. Source
4. Gate
CHARACTERISTIC
Drain to Source Voltage
Drain Current
Input Power
SYMBOL
VDS
ID
Pin
MIN.
TYP.
2
10
MAX.
3
20
0
Unit
V
mA
dBm
Document No. P11785EJ3V0DS00 (3rd edition)
(Previous No. TC-2316)
Date Published July 1996 P
©
Printed in Japan
1991
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