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BUZ351 View Datasheet(PDF) - Intersil

Part Name
Description
Manufacturer
BUZ351 Datasheet PDF : 1 Pages
1
Semiconductor
Data Sheet
BUZ351
October 1998 File Number 2266.1
11.5A, 400V, 0.400 Ohm, N-Channel Power
Features
[ /Title
(BUZ35
1)
/Sub-
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
• 11.5A, 400V
• rDS(ON) = 0.400
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
ject
(11.5A,
400V,
0.400
Ohm,
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA17434.
Ordering Information
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
N-Chan- PART NUMBER
PACKAGE
nel
BUZ351
TO-218AC
BRAND
BUZ351
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Power NOTE: When ordering, use the entire part number.
Symbol
MOS-
D
FET)
/Author
()
G
/Key-
words
S
(Harris
Semi-
conduc- Packaging
tor, N-
JEDEC TO-218AC
Chan-
nel
Power
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
MOS-
FET,
TO-
220AB)
/Cre-
ator ()
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/Use-
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998
 

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