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K1016 View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
Manufacturer
K1016
Iscsemi
Inchange Semiconductor Iscsemi
K1016 Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1016
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 8A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=500V; VGS= 0
VSD
Forward On-Voltage
IS=15A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=15A;
RL=25Ω
toff
Turn-off time
MIN TYP. MAX UNIT
500
V
2.5
3.5
5.0
V
0.36 0.55
Ω
±100 nA
500 uA
1.1 1.6
V
100 150
ns
170 260
ns
80
120
ns
330 400 ns
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
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