Datasheet -- SEP8506-003
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SEP Series GaAs Infrared Emitting Diode, Side-emitting
q Side-emitting plastic package
q 50 ° (nominal) beam angle
q 935 nm wavelength
q Mechanically and spectrally matched to SDP8406
phototransistor, SDP8106 photodarlington and SDP8000/8600
series Schmitt trigger
The SEP8506 is a gallium arsenide infrared emitting diode molded in
a side-emitting red plastic package. The chip is positioned to emit
radiation through a plastic lens from the side of the package.
SEP Series GaAs Infrared Emitting Diode, Side-emitting Plastic Package
Beam Angle (Degree)
Continuous Forward Current
0.45 - 0.90 mW/
Reverse Breakdown Voltage
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