Philips Semiconductors
NPN silicon planar epitaxial microwave
power transistor
Product specification
LLE18100X
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
Rth mb-h
PARAMETER
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
CONDITIONS
Tj = 100 °C
MAX.
4.2 K/W
0.2 K/W
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified
SYMBOL
PARAMETER
ICBO
collector cut-off current
ICER
collector cut-off current
ICEO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
CONDITIONS
VCB = 20 V;
IE = 0
VCE = 30 V;
RBE = 220 Ω
VCE = 20 V;
IB = 0
VEB = 1.5 V;
IC = 0
VCE = 3 V;
IC = 1 A
MIN. MAX. UNIT
−
1
mA
−
10
mA
−
10
mA
−
100
µA
15
100
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier (note 1).
MODE OF OPERATION
f
(GHz)
VCE
(V)
ICQ
PL1
Gpo
(A)
(W)
(dB)
class AB (CW)
1.85
24
0.1
≥ 9;
≥ 8;
typ. 11
typ. 10
Note
1. The test circuit is split into 2 independant halves each being 30 × 40 mm in size.
Zi/ZL
(Ω)
see Figs 8 and 9
November 1994
4