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1N4150W View Datasheet(PDF) - General Semiconductor

Part NameDescriptionManufacturer
1N4150W SMALL SIGNAL DIODES GE
General Semiconductor GE
1N4150W Datasheet PDF : 1 Pages
1
1N4150W
SMALL SIGNAL DIODES
SOD-123
.022 (0.55)
Cathode Mark
Top View
.067 (1.70)
.055 (1.40)
min. .010 (0.25)
FEATURES
¨ Silicon Epitaxial Planar Diode
¨ For general purpose and switching.
¨ This diode is also available in other
case styles including the DO-35 case with the type
designation 1N4150 and the MiniMELF case with the
type designation LL4150.
MECHANICAL DATA
Case: SOD-123 Plastic Case
Weight: approx. 0.01 g
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified.
Peak Reverse Voltage
Maximum Average Rectified Current
Maximum Power Dissipation at Tamb = 25¡C
Maximum Forward Voltage Drop at IF = 200 mA
Maximum Reverse Current at VR = 50 V
Maximum Reverse Recovery Time at IF = IR = 10 to 200 mA, to 0.1 IF
Maximum Junction Temperature
Storage Temperature Range
NOTES:
(1) Valid provided that electrodes are kept at ambient temperature
SYMBOL
VRM
IO
Ptot
VF
IR
Trr
Tj
TS
VALUE
UNIT
50
V
200
mA
410 (1)
mW
1.0
V
100
nA
4.0
ns
150
¡C
Ð65 to +150
¡C
1/4/99
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