KSE702 View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

KSE702

PNP Epitaxial Silicon Darlington Transistor

Fairchild Semiconductor 

Typical Characteristics

-5

IB= -1000µs

IB= -900µs

-4

IB= -800µs

IB= -700µs

IB= -600µs

-3

IB= -500µs

-2

I

=

B

-400µs

I

=

B

-300µs

IB= -200µs

IB= -100µs

-1

-0

-0

-1

-2

-3

-4

-5

VCE(V),COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

-100

IC = 500 IB

-10

VBE(sat)

-1

VCE(sat)

-0.1

-0.01

-0.1

-1

-10

IC[A], COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

-100

-10

-1

-0.1

-1

D.C.

5ms1ms

100µs

MJE700/701

MJE702/703

-10

-100

VCE[V], COLLECTOR-EMITTER VOLTAGE

-1000

Figure 5. Safe Operating Area

©2001 Fairchild Semiconductor Corporation

10k

VCE = -3V

1k

100

10

-0.01

-0.1

-1

-10

IC[A], COLLECTOR CURRENT

Figure 2. DC current Gain

1000

100

f=0.1MHZ

IE=0

10

1

-0.01

-0.1

-1

-10

-100

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 4. Collector Output Capacitance

60

50

40

30

20

10

0

0

25

50

75

100

125

150

175

TC[oC], CASE TEMPERATURE

Figure 6. Power Derating

Rev. A2, June 2001

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