DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

BYT30G-400 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
BYT30G-400
ST-Microelectronics
STMicroelectronics ST-Microelectronics
BYT30G-400 Datasheet PDF : 5 Pages
1 2 3 4 5
BYT30G-400
THERMAL RESISTANCE
Symbol
Rth (j-c)
Junction to case
Parameter
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
IR *
Reverse leakage current VR = VRRM
Tj = 25°C
Tj = 100°C
VF ** Forward voltage drop
IF = 30 A
Tj = 100°C
IF = 30 A
Tj = 25°C
Pulse test : * tp = 5 ms, δ< 2 %
** tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation :
P = 1.1 x IF(AV) + 0.0095 IF2(RMS)
RECOVERY CHARACTERISTICS
Symbol
trr
Parameter
Reverse recovery
time
Test Conditions
Tj = 25°C
Irr = 0.25 A
IF = 0.5A
IR = 1A
Tj = 25°C
IF = 1A
dIF/dt = -15A/µs VR = 30V
TURN-OFF SWITCHING CHARACTERISTICS
Symbol
tIRM
Parameter
Maximum reverse
recovery time
IRM
Maximum reverse
recovery current
C factor
Turn-off
overvoltage
coefficient
Test Conditions
Tj = 100°C dIF/dt = -120A/µs
IF = 30 A
dIF/dt = -240A/µs
VCC = 200 V dIF/dt = -120A/µs
Lp < 0.05 µH dIF/dt = -240A/µs
Tj = 100°C
IF = IF(AV)
VCC = 60 V Lp = 1 µH
dIF/dt = -30A/µs
PIN OUT configuration in D2PAK:
Value
1
Unit
°C/W
Min. Typ. Max. Unit
35 µA
6 mA
1.4 V
1.5
Min. Typ. Max. Unit
50 ns
100
Min. Typ. Max. Unit
75 ns
50
9
ns
12
3.3
/
2/5
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]