isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
FQA24N50F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
500
V
VGS(th)
Gate Threshold Voltage
VDS=±30V; ID=0.25mA
3
5
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=12A
590 650
mΩ
IGSS
IDSS
VSDF
Gate-Source Leakage Current
Drain-Source Leakage Current
Diode forward voltage
VGS= ±30V;VDS= 0V
VDS= 500V; VGS= 0V;Tj=25℃
VDS= 400V; VGS= 0V;Tj=125℃
ISD=24A, VGS = 0 V
±0.1 μA
50
500
μA
1.4
V
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