BUZ 172
Drain-source on-resistance
RDS (on) = Æ’(Tj)
parameter: ID = -3.7 A, VGS = -10 V
1.7
Ω
1.4
RDS (on)
1.2
1.0
0.8
98%
0.6
typ
0.4
0.2
0.0
-60
-20
20
60
100 ËšC 160
Tj
Gate threshold voltage
VGS (th) = Æ’(Tj)
parameter: VGS = VDS, ID = 1 mA
-4.6
V
-4.0
VGS(th) -3.6
-3.2
98%
typ
-2.8
-2.4
2%
-2.0
-1.6
-1.2
-0.8
-0.4
0.0
-60
-20
20
60
100 ËšC 160
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
10 1
Forward characteristics of reverse diode
IF = Æ’(VSD)
parameter: Tj, tp = 80 µs
-10 2
C
nF
10 0
A
IF
-10 1
Ciss
10 -1
Coss
Crss
10 -2
0
-5 -10 -15 -20 -25 -30 V -40
VDS
Data Sheet
7
-10 0
Tj = 25 ËšC typ
Tj = 150 ËšC typ
Tj = 25 ËšC (98%)
Tj = 150 ËšC (98%)
-10 -1
0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0
VSD
05.99