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U630H64DK25 查看數據表(PDF) - Zentrum Mikroelektronik Dresden AG

零件编号产品描述 (功能)生产厂家
U630H64DK25 HardStore 8K x 8 nvSRAM ZMD
Zentrum Mikroelektronik Dresden AG ZMD
U630H64DK25 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Read Cycle 1: Ai-controlled (during Read cycle: E = G = VIL, W = NE = VIH)f
Ai
DQi
Output
Previous
Data Valid
1
tcR
Address Valid
2
ta(A)AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
Output Data
Valid
9
tv(A)
Read Cycle 2: G-, E-controlled (during Read cycle: W = NE = VIH)g
1
tcR
Ai
E
G
DQi
Output
ICC
High Impedance
ACTI VE
STANDBY
Address Valid
2
ta(A) 3
ta(E)
7
ten(E)
4
ta(G)
8
ten(G)
10
tPU
AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA
5
tdis(E)
6
tdis(G)
Output Data
Valid
11
tPD
U630H64
No. Switching Characteristics
Write Cycle
12 Write Cycle Time
13 Write Pulse Width
14 Write Pulse Width Setup Time
15 Address Setup Time
16 Address Valid to End of Write
17 Chip Enable Setup Time
18 Chip Enable to End of Write
19 Data Setup Time to End of Write
20 Data Hold Time after End of Write
21 Address Hold after End of Write
22 W LOW to Output in High-Zh, i
23 W HIGH to Output in Low-Z
Symbol
Alt. #1 Alt. #2 IEC
25
35
45
Unit
Min. Max. Min. Max. Min. Max.
tAVAV tAVAV
tcW
25
35
45
ns
tWLWH
tw(W)
20
30
35
ns
tWLEH tsu(W)
20
30
35
ns
tAVWL tAVEL
tsu(A)
0
0
0
ns
tAVWH tAVEH tsu(A-WH) 20
30
35
ns
tELWH
tsu(E)
20
30
35
ns
tELEH
tw(E)
20
30
35
ns
tDVWH tDVEH
tsu(D)
12
18
20
ns
tWHDX tEHDX
th(D)
0
0
0
ns
tWHAX tEHAX
th(A)
0
0
0
ns
tWLQZ
tdis(W)
10
13
15 ns
tWHQX
ten(W)
5
5
5
ns
December 12, 1997
5
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