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U630H64DK25 查看數據表(PDF) - Zentrum Mikroelektronik Dresden AG

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U630H64DK25 HardStore 8K x 8 nvSRAM ZMD
Zentrum Mikroelektronik Dresden AG ZMD
U630H64DK25 Datasheet PDF : 14 Pages
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Operating Conditions
Power Supply Voltage
Input Low Voltage
Input High Voltage
Symbol
Conditions
VCC
VIL
-2 V at Pulse Width
10 ns permitted
VIH
U630H64
Min.
Max.
Unit
4.5
5.5
V
-0.3
0.8
V
2.2
VCC+0.3
V
DC Characteristics
Operating Supply Currentb
Average Supply Current during
STOREc
Standby Supply Currentd
(Cycling TTL Input Levels)
Average Supply Current
at tcR = 200 nsb
(Cycling CMOS Input Levels)
Standby Supply Currentd
(Stable CMOS Input Levels)
Symbol
Conditions
ICC1 VCC = 5.5 V
VIL = 0.8 V
VIH = 2.2 V
ICC2
ICC(SB)1
tc
tc
tc
VCC
E
W
VIL
VIH
VCC
E
= 25 ns
= 35 ns
= 45 ns
= 5.5 V
VCC-0.2 V
VCC-0.2 V
0.2 V
VCC-0.2 V
= 5.5 V
VIH
ICC3
ICC(SB)
tc
tc
tc
VCC
W
VIL
VIH
VCC
E
VIL
VIH
= 25 ns
= 35 ns
= 45 ns
= 5.5 V
VCC-0.2 V
0.2 V
VCC-0.2 V
= 5.5 V
VCC-0.2 V
0.2 V
VCC-0.2 V
C-Type
K-Type
Unit
Min. Max. Min. Max.
90
95 mA
80
85 mA
75
80 mA
6
7 mA
30
34 mA
23
27 mA
20
23 mA
15
15 mA
1
1 mA
b: ICC1 and ICC3 are dependent on output loading and cycle rate. The specified values are obtained with outputs unloaded.
The current ICC1 is measured for WRITE/READ - ratio of 1/2.
c: ICC2 is the average current required for the duration of the STORE cycle (STORE Cycle Time).
d: Bringing E VIH will not produce standby current levels until any nonvolatile cycle in progress has timed out. See MODE SELECTION
table. The current ICC(SB)1 is measured for WRITE/READ - ratio of 1/2.
December 12, 1997
3
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