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U630H64DK25 查看數據表(PDF) - Zentrum Mikroelektronik Dresden AG

零件编号产品描述 (功能)生产厂家
U630H64DK25 HardStore 8K x 8 nvSRAM ZMD
Zentrum Mikroelektronik Dresden AG ZMD
U630H64DK25 Datasheet PDF : 14 Pages
First Prev 11 12 13 14
The U630H64 has been designed to draw significantly
less power when E is LOW (chip enabled) but the
access cycle time is longer than 55 ns.
When E is HIGH the chip consumes only standby cur-
The overall average current drawn by the part depends
on the following items:
1. CMOS or TTL input levels
2. the time during which the chip is disabled (E HIGH)
3. the cycle time for accesses (E LOW)
4. the ratio of READs to WRITEs
5. the operating temperature
6. the VCC level
December 12, 1997
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