KSC5024 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
KSC5024 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSC5024
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEX(SUS) Collector-Emitter Sustaining Voltage
V(BR)CBO Collector-Base Breakdown Voltage
CONDITIONS
IC= 3.5A ;IB1= -IB2= 1.4A;
L= 500μH,Clamped
IC= 1mA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 0.8A; VCE= 5V
hFE-2
DC Current Gain
IC= 4A; VCE= 5V
COB
Output Capacitance
fT
Current-Gain—Bandwidth Product
IE= 0; VCB= 10V; ftest= 1MHz
IC= 0.8A ; VCE= 10V
Switching Times; Resistive Load
ton
Turn-On Time
ts
Storage Time
tf
Fall Time
IC= 5A; IB1= 1A; IB2= -2A;
VCC=200V; RL=40Ω
MIN TYP. MAX UNIT
500
V
800
V
500
V
7
V
1.0 V
1.5 V
10 μA
10 μA
15
50
8
120
pF
18
MHz
0.5 μs
3.0 μs
0.3 μs
hFE-1 Classifications
R
O
Y
15-30 20-40 30-50
isc website：www.iscsemi.cn
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