KTX401E View Datasheet(PDF) - KEC
Part Name
Description
Manufacturer
| KTX401E Datasheet PDF : 0 Pages | |||
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
ᴌIncluding two(TR, Diode) devices in TESV.
(Thin Extreme Super mini type with 5pin.)
ᴌSimplify circuit design.
ᴌReduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT (TOP VIEW)
5
4
Marking
5
D1
Q1
C
Type Name
4
hFE Rank
1
2
MARK SPEC
Type
Mark
3
1
2
3
KTX401E
Q1 hFE Rank : Y
CD
KTX401E
Q1 hFE Rank : GR
CE
KTX401E
EPITAXIAL PLANAR NPN TRANSISTOR
SILICON EPITAXIAL PLANAR TYPE DIODE
B
B1
1
5
DIM MILLIMETERS
A
1.6 +_ 0.05
A1
1.0+_ 0.05
2
B
1.6+_ 0.05
B1
1.2+_ 0.05
3
4
C
0.50
D
0.2+_ 0.05
H
0.5+_ 0.05
P
P
J
0.12+_ 0.05
P
5
1. D1 ANODE
2. Q 1 EMITTER
3. Q 1 BASE
4. Q 1 COLLECTOR
5. D1 CATHODE
TESV
MAXIMUM RATINGS (Ta=25ᴱ)
TRANSISTOR Q1
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
DIODE D1
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10mS)
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
SYMBOL
VRM
VR
IFM
IO
IFSM
PD
Tj
Tstg
RATING
60
50
5
150
30
100
150
-55~150
RATING
85
80
300
100
2
-
150
-55ᴕ150
UNIT
V
V
V
Ὠ
Ὠ
Ὥ
ᴱ
ᴱ
UNIT
V
V
Ὠ
Ὠ
A
Ὥ
ᴱ
ᴱ
2002. 1. 24
Revision No : 1
1/2
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