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PN4250A 查看數據表(PDF) - Fairchild Semiconductor

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PN4250A PNP General Purpose Amplifier FAIRCHILDSEMICONDUCTOR
Fairchild Semiconductor FAIRCHILDSEMICONDUCTOR
PN4250A Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CES
V(BR)CBO
Collector-Emitter Breakdown
Voltage*
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO
Collector-Cutoff Current
IEBO
Emitter-Cutoff Current
IC = 5.0 mA, IB = 0
IC = 10 µA, IB = 0
IC = 10 µA, IE = 0
IE = 10 µA, IC = 0
VCB = 50 V, IE = 0
VEB = 3.0 V, IC = 0
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VCE = 5.0 V, IC = 100 µA
IC = 10 mA, IB = 0.5 mA
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
hfe
Small-signal Current Gain
hie
Input Impedance
hoe
Output Admittance
hre
Voltage Feedback Ratio
NF
Noise Figure
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
VCB = 5.0 V, f = 1.0 MHz
VCE = 5.0 V, IC = 1.0 m A,
f = 1.0 kHz
VCE = 5.0 V, IC = 250 µA,
RS = 1.0 k , f = 1.0 kHz,
BW = 150 Hz
VCE = 5.0 V, IC = 20 µA,
RS = 10 k, f = 1.0 kHz,
BW = 150 Hz
60
V
60
V
60
V
5.0
V
10
nA
20
nA
250
700
0.25
V
6.0
pF
250
800
6.0
20
k
5.0
50
µmhos
10
x10-4
2.0
dB
2.0
dB
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