U635H16 View Datasheet(PDF) - Zentrum Mikroelektronik Dresden AG
Part Name
Description
Manufacturer
U635H16 Datasheet PDF : 13 Pages
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NONVOLATILE MEMORY OPERATIONS
MODE SELECTION
U635H16
E
W
A10 - A0
(hex)
Mode
I/O
H
X
X
Not Selected
Output High Z
L
H
X
Read SRAM
Output Data
L
L
X
Write SRAM
Input Data
L
H
000
Read SRAM
Output Data
555
Read SRAM
Output Data
2AA
Read SRAM
Output Data
7FF
Read SRAM
Output Data
0F0
Read SRAM
Output Data
70F
Nonvolatile STORE
Output High Z
L
H
000
Read SRAM
Output Data
555
Read SRAM
Output Data
2AA
Read SRAM
Output Data
7FF
Read SRAM
Output Data
0F0
Read SRAM
Output Data
70E
Nonvolatile RECALL
Output High Z
Power
Standby
Active
Active
Active
Active
Notes
m
k, l
k, l
k, l
k, l
k, l
k
k, l
k, l
k, l
k, l
k, l
k
k: The six consecutive addresses must be in order listed (000, 555, 2AA, 7FF, 0F0, 70F) for a Store cycle or (000, 555, 2AA, 7FF,0F0, 70E) for
a RECALL cycle. W must be high during all six consecutive cycles.
See STORE cycle and RECALL cycle tables and diagrams for further details.
The following six-address sequence is used for testing purposes and should not be used: 000, 555, 2AA, 7FF, 0F0, 39C.
l: Activation of nonvolatile cycles does not depend on the state of G.
m: I/O state assumes that G ≤ VIL.
No.
PowerStore
Power Up RECALL
24 Power Up RECALL Durationn, e
25 STORE Cycle Durationf
26
time allowed to Complete SRAM
Cyclef, e
Low Voltage Trigger Level
Symbol
Alt.
IEC
tRESTORE
tPDSTORE
tDELAY
VSWITCH
Conditions
Min. Max. Unit
the power supply vol-
tage must stay above
3.6 V at least
10 ms after the start
of the STORE opera-
tion
650 µs
10 ms
1
µs
4.0 4.5 V
n: tRESTORE starts from the time VCC rises above VSWITCH.
December 12, 1997
99
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