IRG4RC10SDPBF View Datasheet(PDF) - International Rectifier
Part Name
Description
Manufacturer
IRG4RC10SDPBF
International Rectifier
IRG4RC10SDPBF Datasheet PDF : 11 Pages
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IRG4RC10SDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
∆V(BR)CES/∆TJ
VCE(on)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
VFM
IGES
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Min. Typ. Max. Units
600 — — V
— 0.64 — V/°C
— 1.58 1.8
— 2.05 — V
— 1.68 —
3.0 — 6.0
— -9.5 — mV/°C
3.65 5.48 — S
— — 250 µA
— — 1000
— 1.5 1.8 V
— 1.4 1.7
— — ±100 nA
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 8.0A
IC = 14.0A
VGE = 15V
See Fig. 2, 5
IC = 8.0A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC =8.0A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC =4.0A
See Fig. 13
IC =4.0A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Total Gate Charge (turn-on)
— 15 22
IC = 8.0A
Gate - Emitter Charge (turn-on)
— 2.42 3.6 nC VCC = 400V
See Fig. 8
Gate - Collector Charge (turn-on)
— 6.53 9.8
VGE = 15V
Turn-On Delay Time
— 76 —
TJ = 25°C
Rise Time
Turn-Off Delay Time
— 32 — ns IC = 8.0A, VCC = 480V
— 815 1200
VGE = 15V, RG = 100Ω
Fall Time
— 720 1080
Energy losses include "tail" and
Turn-On Switching Loss
— 0.31 —
diode reverse recovery.
Turn-Off Switching Loss
— 3.28 — mJ See Fig. 9, 10, 18
Total Switching Loss
— 3.60 10.9
Total Switching Loss
— 1.46 2.6 mJ IC = 5.0A
Turn-On Delay Time
— 70 —
TJ = 150°C, See Fig. 10,11, 18
Rise Time
Turn-Off Delay Time
— 36 —
— 890 —
ns IC = 8.0A, VCC = 480V
VGE = 15V, RG = 100Ω
Fall Time
— 890 —
Energy losses include "tail" and
Total Switching Loss
— 3.83 — mJ diode reverse recovery.
Internal Emitter Inductance
— 7.5 — nH Measured 5mm from package
Input Capacitance
— 280 —
VGE = 0V
Output Capacitance
— 30 — pF VCC = 30V
See Fig. 7
Reverse Transfer Capacitance
— 4.0 —
ƒ = 1.0MHz
Diode Reverse Recovery Time
— 28 42 ns TJ = 25°C See Fig.
— 38 57
TJ = 125°C 14
IF =4.0A
Diode Peak Reverse Recovery Current — 2.9 5.2 A TJ = 25°C See Fig.
— 3.7 6.7
TJ = 125°C 15
VR = 200V
Diode Reverse Recovery Charge
— 40 60 nC TJ = 25°C See Fig.
— 70 105
TJ = 125°C
16 di/dt = 200A/µs
Diode Peak Rate of Fall of Recovery
— 280 — A/µs TJ = 25°C See Fig.
During tb
— 235 —
TJ = 125°C 17
Details of note through are on the last page
2
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