AM29F200A View Datasheet(PDF) - Advanced Micro Devices

Part Name

Description

Manufacturer

AM29F200A

2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory

Advanced Micro Devices 

PRELIMINARY

ERASE AND PROGRAMMING PERFORMANCE

Parameter

Sector Erase Time

Chip Erase Time

Byte Programming Time

Word Programming Time

Chip Programming Time (Note 3)

Typ (Note 1)

1

7

7

14

1.8

Limits

Max (Note 2)

8

56

300

600

5.4

Unit

Comments

sec Excludes 00h programming prior to

sec erasure (Note 4)

µs

µs

Excludes system-level overhead

(Note 5)

sec

Notes:

1. Typical program and erase times assume the following conditions: 25°C, 5.0 V VCC, 100,000 cycles. Additionally,

programming typicals assume checkerboard pattern.

2. Under worst case conditions of 90°C, VCC = 4.5 V, 100,000 cycles.

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes

program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then

does the device set DQ5 = 1. See the section on DQ5 for further information.

4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 1

for further information on command definitions.

6. The device has a guaranteed minimum erase and program cycle endurance of 100,000 cycles.

LATCHUP CHARACTERISTICS

Parameter Description

Input Voltage with respect to VSS on all I/O pins

VCC Current

Includes all pins except VCC. Test conditions: VCC = 5.0 V, one pin at a time.

Min

–1.0 V

–100 mA

TSOP AND SO PIN CAPACITANCE

Parameter

Symbol

Parameter Description

Test Setup

Typ

Max

CIN

Input Capacitance

VIN = 0

6

7.5

COUT

Output Capacitance

VOUT = 0

8.5

12

CIN2

Control Pin Capacitance

VIN = 0

8

10

Notes:

1. Sampled, not 100% tested.

2. Test conditions TA = 25°C, f = 1.0 MHz.

DATA RETENTION

Parameter

Minimum Pattern Data Retention Time

Test Conditions

Min

150°C

10

125°C

20

Max

VCC + 1.0 V

+100 mA

Unit

pF

pF

pF

Unit

Years

Years

Am29F200A

35

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