PRELIMINARY NSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
20
TC = 25°C
Pulse Test
16
12
8
ID = 18A
4
12A
6A
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
20
16
12
8
4
TC = 25°C
VDS = 10V
Pulse Test
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
104
7
5
3
2
103
Ciss
7
5
3
2
102
7
5
3 TCh = 25°C
2 f = 1MHZ
101 VGS = 0V
100 2 3 4 5
7 101
Coss
Crss
2 3 4 5 7 102
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FS12KMA-4A
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
0.5
TC = 25°C
Pulse Test
0.4
0.3
VGS = 10V
20V
0.2
0.1
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
5
4
VDS = 10V
3
Pulse Test
2
TC = 25°C
75°C
101
125°C
7
5
4
3
2
100
7
5
100
2 3 4 5 7 101
2 3 4 5 7 102
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
td(off)
102
7
5 tf
4
3
2 tr
101 td(on)
7
5 TCh = 25°C
4 VDD = 100V
3 VGS = 10V
2 RGEN = RGS = 50Ω
100 2 3 4 5 7 101
2 3 4 5 7 102
DRAIN CURRENT ID (A)
Sep.1998