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STPR320 데이터 시트보기 (PDF) - STMicroelectronics

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STPR320 ULTRA-FAST RECOVERY RECTIFIER DIODES ST-Microelectronics
STMicroelectronics ST-Microelectronics
STPR320 Datasheet PDF : 5 Pages
1 2 3 4 5
STPR320
THERMAL RESISTANCE
Symbol
Rth (j-l)
Parameter
Junction lead (L=5mm)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameters
Test conditions
IR *
Reverse leakage
current
VF **
Forward voltage
drop
Tj = 25°C
Tj = 100°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
VR = VRRM
IF = 3 A
IF = 6 A
IF = 6 A
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation :
P = 0.78 x IF(AV) + 0.070 x IF2(RMS)
Value
25
Unit
°C/W
Min. Typ. Max. Unit
10 µA
0.2 0.5 mA
0.8 0.99 V
0.95 1.20
1.25
RECOVERY CHARACTERISTICS
Symbol
trr
Tj = 25°C
tfr
Tj = 25°C
VFP
Tj = 25°C
Test conditions
IF = 0.5A
IR = 1A
IF = 3A
VFR = 1.1 x VF max
IF = 3A
Irr = 0.25A
dIF/dt = 50 A/µs
dIF/dt = 50 A/µs
Min. Typ. Max. Unit
30 ns
20
ns
3
V
Fig. 1 : Average forward power dissipation versus Fig. 2 : Peak current versus form factor.
average forward current.
2/5
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