BC817-16LT1G View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
BC817-16LT1G Datasheet PDF : 4 Pages
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BC817−16LT1,
BC817−25LT1, BC817−40LT1
General Purpose
Transistors
NPN Silicon
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector −Emitter Voltage
VCEO
45
V
Collector −Base Voltage
VCBO
50
V
Emitter −Base Voltage
VEBO
5.0
V
Collector Current − Continuous
IC
500 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Total Device Dissipation FR− 5 Board, (Note 1) PD
TA = 25°C
Derate above 25°C
225 mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
RqJA
TJ, Tstg
417
−55 to
+150
°C/W
°C
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
xxD
xx
= Specific Device Code
D
= Date Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2004
1
June, 2004 − Rev. 6
Publication Order Number:
BC817−16LT/D
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