NXP Semiconductors
1PS66SB82; 1PS88SB82
15 V, 30 mA low Cd Schottky barrier diodes
103
IF
(mA)
102
mld549
(1) (2)
(3)
10
(2)
(1)
(3)
1
0
0.4
0.8
1.2
1.6
VF (V)
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
Fig 1. Forward current as a function of forward
voltage; typical values
103
mgt838
rdif
(Ω)
102
10
1
10−1
1
10 IF (mA) 102
Fig 3.
f = 1 kHz; Tamb = 25 °C
Differential diode forward resistance as a
function of forward current; typical values
103
IR
(μA)
102
(1)
10
(2)
1
10−1
(3)
mld550
10−2
0
5
10
15
VR (V)
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
Fig 2. Reverse current as a function of reverse
voltage; typical values
1.2
Cd
(pF)
1
mld551
0.8
0.6
0.4
0
0
2
4
6
8
10
VR (V)
Fig 4.
f = 1 MHz; Tamb = 25 °C
Diode capacitance as a function of reverse
voltage; typical values
1PS66SB82_1PS88SB82_4
Product data sheet
Rev. 04 — 13 January 2010
© NXP B.V. 2010. All rights reserved.
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