Elektronische Bauelemente
BD135 / BD137 / BD139
NPN Plastic Encapsulated Transistor
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base
Breakdown Voltage
BD135
BD137
BD139
45
V(BR)CBO
60
80
Collector to Emitter
Breakdown Voltage
BD135
BD137
BD139
45
VCEO(SUS) *
60
80
Emitter to Base Breakdown Voltage
Collector Cut–Off Current
Emitter Cut–Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Collector Output Capacitance
V(BR)EBO
5
ICBO
-
IEBO
-
hFE (1) *
40
hFE (2) *
25
hFE (3) *
25
VCE(sat) *
-
VBE *
-
*Pulse test:pulse width≦350µs, duty cycle≦2.0%
-
-
-
-
V IC=0.1mA, IE=0
-
-
-
-
-
-
V IC=0.03A, IB=0
-
-
-
-
V IE=0.1mA, IC=0
-
0.1
µA VCB=30V, IE=0
-
10
µA VEB=5V, IC=0
-
250
VCE=2V, IC=150mA
-
-
VCE=2V, IC=5mA
-
-
VCE=2V, IC=500mA
-
0.5
V IC=500mA, IB=50mA
-
1
V VCE=2V, IC=500mA
http://www.SeCoSGmbH.com/
07-Mar-2012 Rev. A
Any changes of specification will not be informed individually.
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