STW9NA60 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
| STW9NA60 Datasheet PDF : 0 Pages | |||
STW9NA60-STH9NA60FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
( di / dt ) o n
Qg
Qgs
Qgd
P ar am et e r
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 300 V ID = 4.5 A
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
VDD = 480 V ID = 9 A
RG = 47 Ω
VGS = 10 V
(see test circuit, figure 5)
VDD = 480 V ID = 9 A VGS = 10 V
Min.
Typ.
21
32
Max.
30
45
180
75
100
11
36
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 480 V ID = 9 A
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
16
18
26
Max.
23
25
35
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
VSD (∗) Forward On Voltage
ISD = 9.5 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 9.5 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
(see test circuit, figure 5)
I R RM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
Max.
9.5
38
Unit
A
A
1.6
V
660
ns
12
µC
36
A
Safe Operating Area for TO-247
Safe Operating Area for ISOWATT218
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