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STW9NA60 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STW9NA60 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
STW9NA60-STH9NA60FI
THERMAL DATA
Rthj-case
R th j -a mb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
T O - 247
0.78
ISOWATT 218
1. 78
30
0. 1
3 00
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
9. 5
450
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing
Tc = 100 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
600
Typ. Max.
25
250
± 100
Unit
V
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
ID(o n)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 4. 5 A
Resistance
On State Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
2.25
Typ.
3
0.69
Max.
3.75
0.8
Unit
V
9
A
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID = 4.5A
Min.
5
Typ.
8.3
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
1800 2350 pF
230 300
pF
65
85
pF
2/10
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