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STW9NA60 View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
STW9NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ST-Microelectronics
STMicroelectronics ST-Microelectronics
STW9NA60 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
STW9NA60
®
STH9NA60FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
STW 9NA60
S TH9NA 60F I
V DSS
600 V
600 V
RDS(on)
< 0.8
< 0.8
ID
9.5 A
6.4 A
s TYPICAL RDS(on) = 0.69
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
23
1
TO-247
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 k)
VGS G ate-source Volt age
ID
Drain Current (continuous) at Tc = 25 oC
ID
Drain Current (continuous) at Tc = 100 oC
IDM ()
Ptot
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
VISO I nsulation W ithstand Voltage (DC)
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
() Pulse width limited by safe operating area
October 1998
Va l u e
ST W9NA60 STH9NA60F I
600
600
± 30
6.4
9.5
4
6
38
38
70
160
0.56
1.28
4000
-65 to 150
150
Un it
V
V
V
A
A
A
W
W /o C
V
oC
oC
1/10
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