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IRL3202PBF Просмотр технического описания (PDF) - International Rectifier

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IRL3202PBF HEXFET® Power MOSFET IR
International Rectifier IR
IRL3202PBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRL3202PbF
3500
3000
2500
2000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1500
1000
500
0
1
Coss
Crss
10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
15
ID = 29A
12
VDS = 16V
9
6
3
0
0 10 20 30 40 50 60 70
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150° C
TJ = 25° C
10
VGS = 0 V
1
0.2
0.8
1.4
2.0
2.6
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
100us
1ms
10
10ms
TC = 25°C
TJ = 150°C
Single Pulse
1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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