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IRLZ44S View Datasheet(PDF) - Vishay Semiconductors

Part NameIRLZ44S Vishay
Vishay Semiconductors Vishay
DescriptionPower MOSFET
IRLZ44S Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
IRLZ44S, SiHLZ44S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
-
MAX.
62
40
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
VDS/TJ
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VDS = VGS, ID = 250 μA
VGS = ± 10 V
VDS = 60 V, VGS = 0 V
VDS = 48 V, VGS = 0 V, TJ = 150 °C
VGS = 5.0 V
ID = 31 Ab
VGS = 4.0 V
ID = 25 Ab
VDS = 25 V, ID = 31 Ab
Dynamic
MIN. TYP. MAX. UNIT
60
-
-
V
-
0.070
-
V/°C
1.0
-
2.0
V
-
-
± 100 nA
-
-
25
μA
-
-
250
-
-
0.028
-
-
0.039
23
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
LS
Drain-Source Body Diode Characteristics
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 5.0 V
ID = 51 A, VDS = 48 V,
see fig. 6 and 13b
VDD = 30 V, ID = 51 A,
Rg = 4.6 , RD = 0.56 , see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
-
3300
-
-
1200
-
pF
-
200
-
-
-
66
-
-
12
nC
-
-
43
-
17
-
-
230
-
ns
-
42
-
-
110
-
-
4.5
-
nH
-
7.5
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Currenta
ISM
p - n junction diode
D
G
S
-
-
50c
A
-
-
200
Body Diode Voltage
VSD
TJ = 25 °C, IS = 51 A, VGS = 0 Vb
-
-
2.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
130
180
ns
TJ = 25 °C, IF = 51 A, dI/dt = 100 A/μsb
Qrr
-
0.84 1.3
μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Current limited by the package, (Die Current = 51 A).
www.vishay.com
2
Document Number: 91329
S11-1055-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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