IRF634 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
IRF634 Datasheet PDF : 2 Pages
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C/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, L/nc.
N-Channel MOSFET Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
IRF634
DESCRIPTION
• Drain Current-ID=8.1A@ TC=25°C
• Drain Source Voltage-
: VDSS= 250V(Min)
• Static Drain-Source On-Resistance
: RDS(OD = 0.45 & (Max)
• Fast Switching Speed
• Low Drive Requirement
APPLICATIONS
• High current, high speed switching
• Switch mode power supplies
• DC-DC converters for telecom, industrial,and lighting
equipment ideal for monitor's B+ function
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL ARAMETER
VALUE UNIT
A
t Ha
tH
0(2)
S(3)
LGate
2. Drain
3. Source
TO-220C package
-HH-s
00
SOD
VDSS
VGS
ID
Drain-Source Voltage (VGS=O)
Gate-Source Voltage
Drain Current-continuous® TC=25'C
250
V
±20
V
8.1
A
r°
T=^
Plot
Total Dissipation@TC=25'C
74
W
T,
Max. Operating Junction Temperature
150
'C
Tstg
Storage Temperature Range
-65-150 'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
1.56
Thermal Resistance, Junction to Ambient 62.5
gc/w
•c/w
mm
DIM WIN
A 15.70
B 9.90
C 4.20
D 0.70
F 3.40
G 4.98
H 2.70
J 0.44
K 13.20
L 1.10
Q 2.70
R 2.50
S 1.29
u 6.45
V 8.66
MAX
15.90
10.10
4.40
0.90
3.60
5.18
2.90
0.46
13.40
1.30
2.90
2.70
1.31
6.65
8.86
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Informationfurnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
Lo press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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