IRFBF20LPBF(2011) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
IRFBF20LPBF Datasheet PDF : 8 Pages
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IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
900
VGS = 10 V
38
4.7
21
Single
8.0
D
I2PAK (TO-262) D2PAK (TO-263)
G
D
S
G
S
N-Channel MOSFET
FEATURES
• Surface Mount (IRFBF20S/SiHFBF20S)
• Low-Profile Through-Hole (IRFBF20L/SiHFBF20L) Available
• Available
in
Tape
and
Reel RoHS*
(IRFBF20S/SiHFBF20S)
COMPLIANT
• Dynamic dV/dt Rating
• 150 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs form Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK is a surface mount power package capabel of
the accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0 W in a typical surface mount application. The
through-hole version (IRFBF20L/SiHFBF20L) is available for
low-profile applications.
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free
IRFBF20SPbF
SiHFBF20S-E3
SnPb
IRFBF20S
SiHFBF20S-E3
Note
a. See device orientation.
D2PAK (TO-263)
IRFBF20STRLPbFa
SiHFBF20STL-E3a
IRFBF20STRLa
SiHFBF20STLa
D2PAK (TO-263)
IRFBF20STRRPbFa
SiHFBF20STR-E3a
IRFBF20STRRa
SiHFBF20STRa
I2PAK (TO-262)
IRFBF20LPbF
SiHFBF20L-E3
IRFBF20L
SiHFBF20L
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltagee
Gate-Source Voltagee
Continuous Drain Current
Pulsed Drain Currenta,e
Linear Derating Factor
VDS
VGS
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energyb, e
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
900
± 20
1.7
1.1
6.8
0.43
180
1.7
5.4
54
3.1
1.5
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
Document Number: 91121
S-Pending-Rev. A, 23-Jun-08
WORK-IN-PROGRESS
www.vishay.com
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