IRF7470 View Datasheet(PDF) - International Rectifier
Part Name
Description
Manufacturer
IRF7470 Datasheet PDF : 8 Pages
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IRF7470
Static @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
40
โV(BR)DSS/โTJ Breakdown Voltage Temp. Coefficient โโโ
โโโ
RDS(on)
Static Drain-to-Source On-Resistance โโโ
โโโ
VGS(th)
Gate Threshold Voltage
0.8
โโโ
IDSS
Drain-to-Source Leakage Current
โโโ
Gate-to-Source Forward Leakage
โโโ
IGSS
Gate-to-Source Reverse Leakage
โโโ
โโโ โโโ V
0.04 โโโ V/ยฐC
9.0 13
10 15 mโฆ
14.5 30
โโโ 2.0 V
โโโ 20 ยตA
โโโ 100
โโโ 200
nA
โโโ -200
VGS = 0V, ID = 250ยตA
Reference to 25ยฐC, ID = 1mA
VGS = 10V, ID = 10A ย
VGS = 4.5V, ID = 8.0A ย
VGS = 2.8V, ID = 5.0A ย
VDS = VGS, ID = 250ยตA
VDS = 32V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 125C
VGS = 12V
VGS = -12V
Dynamic @ TJ = 25ยฐC (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
27 โโโ โโโ
โโโ 29 44
โโโ 7.9 12
โโโ 8.0 12
โโโ 23 35
โโโ 10 โโโ
โโโ 1.9 โโโ
โโโ 21 โโโ
โโโ 3.2 โโโ
โโโ 3430 โโโ
โโโ 690 โโโ
โโโ 41 โโโ
S VDS = 20V, ID = 8.0A
ID = 8.0A
nC VDS = 20V
VGS = 4.5V ย
VGS = 0V, VDS = 16V
VDD = 20V
ns ID = 8.0A
RG = 1.8โฆ
VGS = 4.5V ย
VGS = 0V
VDS = 20V
pF ฦ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energyย
Avalanche Currentย
Typ.
โโโ
โโโ
Max.
300
8.0
Units
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ย
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
Min.
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
Typ. Max.
โโโ 2.3
โโโ 85
0.80 1.3
0.65 โโโ
72 110
130 200
76 110
150 230
Units
A
V
ns
nC
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25ยฐC, IS = 8.0A, VGS = 0V ย
TJ = 125ยฐC, IS = 8.0A, VGS = 0V
TJ = 25ยฐC, IF = 8.0A, VR= 20V
di/dt = 100A/ยตs ย
TJ = 125ยฐC, IF = 8.0A, VR=20V
di/dt = 100A/ยตs ย
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