IRFP340B View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

IRFP340B

400V N-Channel MOSFET

Fairchild Semiconductor 

November 2001

IRFP340B

400V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supplies and

electronic lamp ballasts based on half bridge.

Features

• 11A, 400V, RDS(on) = 0.54Ω @VGS = 10 V

• Low gate charge ( typical 41 nC)

• Low Crss ( typical 35 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

G DS

TO-3P

IRFP Series

G!

D

!

●

◀▲

●

●

!

S

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol

VDSS

ID

IDM

VGSS

EAS

IAR

EAR

dv/dt

PD

TJ, TSTG

TL

Parameter

Drain-Source Voltage

Drain Current

- Continuous (TC = 25°C)

- Continuous (TC = 100°C)

Drain Current - Pulsed

(Note 1)

Gate-Source Voltage

Single Pulsed Avalanche Energy

(Note 2)

Avalanche Current

(Note 1)

Repetitive Avalanche Energy

(Note 1)

Peak Diode Recovery dv/dt

(Note 3)

Power Dissipation (TC = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

IRFP340B

400

11

7.0

44

± 30

450

11

16.2

5.5

162

1.3

-55 to +150

300

Thermal Characteristics

Symbol

RθJC

RθCS

RθJA

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to-Ambient

Typ

Max

--

0.77

0.24

--

--

40

Units

V

A

A

A

V

mJ

A

mJ

V/ns

W

W/°C

°C

°C

Units

°C/W

°C/W

°C/W

©2001 Fairchild Semiconductor Corporation

Rev. B, November 2001

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