IRF150 View Datasheet(PDF) - Nell Semiconductor Co., Ltd
Part Name
Description
Manufacturer
IRF150 Datasheet PDF : 7 Pages
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SEMICONDUCTOR
IRF150 Series RRooHHSS
Nell High Power Products
Fig.5 Typical capacitance vs. Drain-to-Source
voltage
3500
3000
2500
VGS = 0V, f = 1MHz
Ciss = Cgs +Cgd (Cds shorted )
Coss = Cds +Cgd
Crss = Cgd
2000
Ciss
1500
1000
500
0
1
Coss
Crss
10
100
Drain-Source voltage, VSD (V)
Fig.7 Typical gate charge vs. gate-to-source
voltage
20
VDS = 80V
16
VDS = 50V
VDS = 20V
12
8
4
ID = 22 A
0
0
20
40
60
80 100 120
Total gate charge, QG (nC)
Fig.6 Typical source-drain diode forward
voltage
1000
100
10
1
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain voltage, VSD (V)
Fig.8 Maximum safe operating area
1000
Operation in This Area is Limited by RDS(ON)
100
10µs
10
Note:
1. TC = 25°C
2. TJ = 175°C
3. Single Pulse
1
1
10
100µs
1ms
10ms
100
1000
Drain-source voltage, VDS(V)
Fig.9 Maximum drain current vs.
Case temperature
50
40
30
20
10
0
25
50
75 100 125 150 175
Case temperature, TC (°C)
www.nellsemi.com
Page 4 of 7
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