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BD540 View Datasheet(PDF) - Power Innovations

Part NameBD540 Power-Innovations
Power Innovations Power-Innovations
DescriptionPNP SILICON POWER TRANSISTORS
BD540 Datasheet PDF : 6 Pages
1 2 3 4 5 6
BD540, BD540A, BD540B, BD540C
PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
1000
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS632AH
VCE = -4 V
tp = 300 µs, duty cycle < 2%
TC = 25°C
TC = 80°C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCS632AB
-10
100
10
-0·01
-0·1
-1·0
IC - Collector Current - A
Figure 1.
-1·0
-0·1
IC = -100 mA
IC = -300 mA
IC = -1 A
IC = -3 A
-0·01
-10
-0·1
-1·0
-10
-100
-1000
IB - Base Current - mA
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
TCS632AC
-1
VCE = -4 V
TC = 25°C
-0·9
-0·8
-0·7
-0·6
-0·5
-0·01
-0·1
-1
-10
IC - Collector Current - A
Figure 3.
PRODUCT INFORMATION
3
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