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BD540 View Datasheet(PDF) - Power Innovations

Part NameBD540 Power-Innovations
Power Innovations Power-Innovations
DescriptionPNP SILICON POWER TRANSISTORS
BD540 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Copyright © 1997, Power Innovations Limited, UK
BD540, BD540A, BD540B, BD540C
PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
q Designed for Complementary Use with the
BD539 Series
q 45 W at 25°C Case Temperature
q 5 A Continuous Collector Current
B
q Customer-Specified Selections Available
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-base voltage (IE = 0)
RATING
Collector-emitter voltage (IB = 0) (see Note 1)
Emitter-base voltage
Continuous collector current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
BD540
BD540A
BD540B
BD540C
BD540
BD540A
BD540B
BD540C
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Ptot
TA
Tj
Tstg
TL
VALUE
-40
-60
-80
-100
-40
-60
-80
-100
-5
-5
45
2
-65 to +150
-65 to +150
-65 to +150
260
UNIT
V
V
V
A
W
W
°C
°C
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
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