1N6378(2010) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
1N6378 Datasheet PDF : 5 Pages
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ICTE5 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
TRANSZORB® Transient Voltage Suppressors
Case Style 1.5KE
PRIMARY CHARACTERISTICS
VWM
PPPM
PD
IFSM
TJ max.
5.0 V to 18 V
1500 W
6.5 W
200 A
175 °C
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use C suffix (e.g. ICTE18C).
Electrical characteristics apply in both directions.
FEATURES
• Glass passivated chip junction
• Available in uni-directional and
bi-directional
• 1500 W peak pulse power capability
with a 10/1000 μs waveform, repetitive
rate (duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Find out more about Vishay’s Automotive Grade
Product requirements at:
www.vishay.com/applications
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching
and lighting on ICs, MOSFET, signal lines of sensor
units for consumer, computer, industrial and
telecommunication.
MECHANICAL DATA
Case: Molded epoxy body over passivated junction
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the color band
denotes cathode end, no marking on bi-directional
types
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1)
Peak pulse current with a 10/1000 μs waveform (1) (fig. 3)
Power dissipation on infinite heatsink at TL = 75 °C (fig. 8)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Maximum instantaneous forward voltage at 100 A for uni-directional only
Operating junction and storage temperature range
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
(2) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum
SYMBOL
PPPM
IPPM
PD
IFSM
VF
TJ, TSTG
LIMIT
1500
See next table
6.5
200
3.5
- 55 to + 175
UNIT
W
A
W
A
V
°C
Document Number: 88356 For technical questions within your region, please contact one of the following:
Revision: 07-May-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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