1N6383(2008) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
1N6383 Datasheet PDF : 5 Pages
| |||
ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
100
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
10
1
0.1
0.1 µs
1.0 µs
10 µs 100 µs 1.0 ms
td - Pulse Width (s)
10 ms
Figure 1. Peak Pulse Power Rating Curve
100 000
10 000
1000
Measured at
Zero Bias
Measured at Stand-Off
Voltage VWM
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
1.0
10
100 200
VBR - Breakdown Voltage (V)
Figure 4. Typical Junction Capacitance Uni-Directional
100
75
50
25
0
0 25 50 75 100 125 150 175 200
TJ - Initial Temperature (°C)
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
100 000
Measured at
Zero Bias
Bi-Directional Type
10 000
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
1000
100
1.0
Measured at Stand-Off
Voltage VWM
10
100 200
VBR - Breakdown Voltage (V)
Figure 5. Typical Junction Capacitance
150
tr = 10 µs
TJ = 25 °C
Pulse Width (td)
is defined as the Point
Peak Value
where the Peak Current
100
IPPM
decays to 50 % of IPPM
Half Value - IPP
IPPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
td
0
0
1.0
2.0
3.0
4.0
t - Time (ms)
Figure 3. Pulse Waveform
200
TJ = TJ max.
8.3 ms Single Half Sine-Wave
100
50
10
1
5
10
50 100
Number of Cycles at 60 Hz
Figure 6. Maximum Non-Repetitive Forward Surge Current
Uni-Directional Only
Document Number: 88356 For technical questions within your region, please contact one of the following:
Revision: 21-Oct-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
|
|
Share Link: 