MMDT2907A View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
Manufacturer
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MMDT2907A
Preliminary
DUAL TRANSISTOR
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING CHARACTERISTICS
Turn-on Time
Delay Time
Rise Time
tON
tD
tR
VCC=30V, IC=150mA,
IB1=15mA
Turn-off Time
Storage Time
Fall Time
tOFF
tS
tF
VCC=6.0V, IC=150mA,
IB1=IB2=15mA
Notes: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2.0%
2. All voltages (V) and currents (A) are negative polarity for PNP transistors.
MIN TYP MAX UNIT
30
ns
8.0
ns
20
ns
80
ns
60
ns
20
ns
TR2
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 1) V(BR)CEO IC=-10mA, IB=0
-30
Collector-Base Breakdown Voltage
V(BR)CBO IC=-10µA, IE=0
-60
Emitter-Base Breakdown Voltage
V(BR)EBO IE=-10µA, IC=0
-5.0
Collector Cutoff Current
ICBO VCB=-50V, IE=0
Emitter Cutoff Current
IEBO VEB=-3.0V, IC=0
ON CHARACTERISTICS
DC Current Gain
IC=-1.0mA, VCE=-10V
50
hFE
IC=-10mA, VCE=-10V
75
IC=-150mA, VCE=-10V (Note 1) 100
IC=-300mA, VCE=-10V (Note 1) 30
Collector-Emitter Saturation Voltage (Note 1)
VCE(sat)
IC=-150mA, IB=-15mA
IC=-300mA, IB=-30mA
Base-Emitter Saturation Voltage (Note 1)
VBE(sat) IC=-150mA, IB=-15mA
SMALL SIGNAL CHARACTERISTICS
Current Gain - Bandwidth Product
fT
IC=-50mA, VCE=-20V,
f=100MHz
Output Capacitance
COBO VCB=-10V, IE=0, f=100kHz
Input Capacitance
Noise Figure
CIBO VEB=-2.0V, IC=0, f=100kHz
NF
IC=-100µA, VCE=-10V,
RS=1.0kΩ, f=1.0kHz
SWITCHING CHARACTERISTICS
Turn-on Time
Delay Time
Rise Time
tON
tD
tR
VCC=-30V, IC=-150mA,
IB1=-15mA
Turn-off Time
Storage Time
Fall Time
tOFF
tS
tF
VCC=6.0V, IC=-150mA,
IB1=IB2=-15mA
Notes: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2.0%
2. All voltages (V) and currents (A) are negative polarity for PNP transistors.
TYP
250
4.0
12
2.0
30
8.0
20
80
60
20
MAX UNIT
V
V
V
-30 nA
-30 nA
-0.4 V
-1.4 V
-1.3 V
MHz
pF
pF
dB
ns
ns
ns
ns
ns
ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R218-028.b
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