MMBT4403W View Datasheet(PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

Part Name

Description

Manufacturer

MMBT4403W

Silicon PNP transistor in a SOT-323 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

MMBT4403W

Rev.E Sep.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

DATA SHEET

数值

Rating

-40

-40

-5.0

-600

200

150

-55～150

单位

Unit

V

V

V

mA

mW

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Emitter Breakdown

Voltage

Collector to Base Breakdown

Voltage

符号

Symbol

测试条件

Test Conditions

VCEO IC=-1.0mA IB=0

VCBO IC=-0.1mA IE=0

最小值 典型值 最大值 单位

Min Typ Max Unit

-40

V

-40

V

Emitter to Base Breakdown Voltage VEBO IE=-0.1mA IC=0

-5.0

V

Collector Cut-Off Current

ICBO VCB=-40V IE=0

-50 nA

Emitter to Base Current

IEBO VEB=-5V

IC=0

-50 nA

hFE(1) VCE=-2.0V IC=-150mA 100

300

hFE(2) VCE=-1.0V IC=-0.1mA 30

DC Current Gain

hFE(3) VCE=-1.0V IC=-1.0mA 60

hFE(4) VCE=-1.0V IC=-10mA

100

hFE(5) VCE=-2.0V IC=-500mA 20

Collector to Emitter Saturation

Voltage

VCE(sat) (1) IC=-150mA IB=-15mA

VCE(sat) (2) IC=-500mA IB=-50mA

-0.4 V

-0.75 V

Base to Emitter Saturation Voltage

Transition Frequency

VBE(sat) (1) IC=-150mA

VBE(sat) (2) IC=-500mA

fT

VCE=-10V

f=100MHz

IB=-15mA

IB=-50mA

IC=-20mA

-0.75

200

-0.95 V

-1.3 V

MHz

Delay Time

Rise Time

td

VCC=-30V IC=-150mA

tr

I B1=-15mA

15 ns

20 ns

Storage Time

Fall Time

ts

VCC=-30V IC=-150mA

tf

IB1=IB2=-15mA

225 ns

30 ns

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