Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

BD896 Ver la hoja de datos (PDF) - Power Innovations

Número de piezacomponentes DescripciónFabricante
BD896 PNP SILICON POWER DARLINGTONS Power-Innovations
Power Innovations Power-Innovations
BD896 Datasheet PDF : 6 Pages
1 2 3 4 5 6
BD896, BD898, BD900, BD902
PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
BD896
-45
Collector-emitter
V(BR)CEO breakdown voltage
IC = -100 mA IB = 0
BD898
-60
(see Note 3)
BD900
-80
BD902
-100
VCE = -30 V IB = 0
BD896
-0.5
ICEO
Collector-emitter
cut-off current
VCE = -30 V
VCE = -40 V
IB = 0
IB = 0
BD898
-0.5
BD900
-0.5
VCE = -50 V IB = 0
BD902
-0.5
VCB = -45 V IE = 0
BD896
-0.2
VCB = -60 V IE = 0
BD898
-0.2
VCB = -80 V IE = 0
BD900
-0.2
ICBO
Collector cut-off
current
VCB = -100 V
VCB = -45 V
IE = 0
IE = 0
TC = 100°C
BD902
BD896
-0.2
-2
VCB = -60 V IE = 0
TC = 100°C
BD898
-2
VCB = -80 V IE = 0
TC = 100°C
BD900
-2
VCB = -100 V IE = 0
TC = 100°C
BD902
-2
Emitter cut-off
IEBO current
VEB = -5 V IC = 0
(see Notes 3 and 4)
-2
Forward current
hFE
transfer ratio
VCE = -3 V IC = -3 A
(see Notes 3 and 4)
750
Collector-emitter
VCE(sat) saturation voltage
IB = -12 mA IC = -3 A
(see Notes 3 and 4)
-2.5
Base-emitter
VBE(on) voltage
VCE = -3 V IC = -3 A
(see Notes 3 and 4)
-2.5
Parallel diode
VEC forward voltage
IE = -8 A IB = 0
-3.5
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.79 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
ton
Turn-on time
toff
Turn-off time
IC = -3 A
VBE(off) = 3.5 V
IB(on) = -12 mA
RL = 10
IB(off) = 12 mA
tp = 20 µs, dc 2%
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
1
µs
5
µs
PRODUCT INFORMATION
2
Direct download click here

 

Share Link : 
All Rights Reserved© datasheetq.com 2015 - 2019  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]