BAS316 View Datasheet(PDF) - Diode Semiconductor Korea

Part Name

Description

Manufacturer

BAS316

Silicon Epitaxial Planar Diode

Diode Semiconductor Korea 

Diode Semiconductor Korea

Silicon Epitaxial Planar Diode

BAS316

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Characteristic

Reverse Breakdown Voltage

Forward Voltage

Symbol

V(BR)R

VF

Reverse Current

IR

Capacitance between terminals CT

Reverse Recovery Time

trr

Min

100

0.62

-

-

-

Max Unit

-

V

0.715 V

0.855

1.0

1.25

1.0

μA

0.03

1.5

pF

4.0

ns

Test Condition

IR=100μA

IF=1.0mA

IF=10mA

IF=50mA

IF=150mA

VR=75V

VR=25V

VR=0,f=1.0MHz

IF=IR=10mA,RL=100Ω

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

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