MJE13003 View Datasheet(PDF) - Nanjing International Group Co
Part Name
Description
Manufacturer
MJE13003 Datasheet PDF : 1 Pages
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DONGGUAN NANJING ELECTRONICS LTD.,
TO-126 Plastic-Encapsulate Transistors
MJE13003 TRANSISTOR (NPN)
TO-126
FEATURES
z Power Switching Applications
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
600
400
6
1
1.25
100
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Fall time
Storage time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)*
hFE(2)
VCE(sat)1
VBE(sat)
fT
tf
tS*
Test conditions
IC= 0.1mA,IE=0
IC= 1mA,IB=0
IE=0.1mA,IC=0
VCB=600V,IE=0
VCE=400V,IB=0
VEB=7V,IC=0
VCE=10V, IC=200mA
VCE=10V, IC=250μA
IC=200mA,IB=40mA
IC=200mA,IB=40mA
VCE=10V, IC=100mA,f=1MHz
IC=100mA
IC=100mA
1 . BASE
2. COLLECTOR
3. EMITTER
Min Typ Max
600
400
6
100
100
10
9
40
5
0.5
1.1
5
0.5
2
4
Unit
V
V
V
uA
uA
uA
V
V
MHz
μs
CLASSIFICATION of hFE(1)
Range
9-15
15-20
20-25
25-30
30-35
35-40
CLASSIFICATION of tS
Rank
A1
Range
2-2.5
A2
2.5-3
B1
3-3.5
B2
3.5-4
A,Apr,2012
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