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MJE15030 View Datasheet(PDF) - Inchange Semiconductor

Part NameDescriptionManufacturer
MJE15030 Silicon NPN Power Transistors Iscsemi
Inchange Semiconductor Iscsemi
MJE15030 Datasheet PDF : 4 Pages
1 2 3 4
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
MJE15030
DESCRIPTION
·
·With TO-220C package
·Complement to type MJE15031
·High transition frequency
·DC current gain specified to 4.0 amperes
hFE = 40 (Min) @ IC = 3.0 Adc
hFE = 20 (Min) @ IC = 4.0 Adc
APPLICATIONS
·Designed for use as high–frequency
drivers in audio amplifiers.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Tc=25)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current (DC)
ICM
Collector current-Peak
IB
Base current
PD
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance ; junction to case
Rth j-A
Thermal resistance , junction to ambient
VALUE
150
150
5
8
16
2
2
50
150
-65~150
UNIT
V
V
V
A
A
A
W
MAX
2.5
62.5
UNIT
/W
/W
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