MJE15028, MJE15030 (NPN),
MJE15029, MJE15031 (PNP)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use as high−frequency drivers in
audio amplifiers.
Features
• High Current Gain − Bandwidth Product
• TO−220 Compact Package
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
MJE15028G, MJE15029G
MJE15030G, MJE15031G
VCEO
Vdc
120
150
Collector−Base Voltage
MJE15028G, MJE15029G
MJE15030G, MJE15031G
VCB
Vdc
120
150
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Device Dissipation
@ TC = 25_C
Derate above 25°C
VEB
5.0
Vdc
IC
8.0
Adc
ICM
16
Adc
IB
2.0
Adc
PD
50
W
0.40
W/_C
Total Device Dissipation
@ TA = 25_C
Derate above 25°C
PD
2.0
W
0.016
W/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristics
Symbol Max
Thermal Resistance, Junction−to−Case
RqJC
2.5
Thermal Resistance, Junction−to−Ambient RqJA
62.5
Unit
_C/W
_C/W
http://onsemi.com
8 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
120−150 VOLTS, 50 WATTS
PNP
COLLECTOR
2,4
NPN
COLLECTOR
2,4
1
BASE
1
BASE
3
EMITTER
4
3
EMITTER
TO−220
CASE 221A
STYLE 1
1
2
3
MARKING DIAGRAM
MJE150xxG
AY WW
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MJE150xx = Device Code
x = 28, 29, 30, or 31
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
November, 2014 − Rev. 7
Publication Order Number:
MJE15028/D