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Part Name  

IRF130 View Datasheet(PDF) - Inchange Semiconductor

Part NameIRF130 Iscsemi
Inchange Semiconductor Iscsemi
DescriptionN-Channel MOSFET Transistor
IRF130 Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID=250µA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=8A
IGSS
Gate Source Leakage Current
VGS=±20V;VDS=0
IDSS
Zero Gate Voltage Drain Current
VDS=100V; VGS=0
VSD
Diode Forward Voltage
IS=14A; VGS=0
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS=25V;
VGS=0V;
fT=1MHz
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
td(off)
Turn-off Delay Time
RGS=15Ω
ID=8A;
VDD=36V;
RL=15Ω
isc Product Specification
IRF130
MIN TYPE MAX UNIT
100
V
2.0
4.0
V
0.18
Ω
±100 nA
250
uA
2.5
V
800
150
pF
500
75
30
ns
45
40
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
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