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Part Name  

IRF130 View Datasheet(PDF) - Inchange Semiconductor

Part NameIRF130 Iscsemi
Inchange Semiconductor Iscsemi
DescriptionN-Channel MOSFET Transistor
IRF130 Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF130
DESCRIPTION
·Drain Current ID=14A@ TC=25
·Drain Source Voltage-
: VDSS= 100V(Min)
·Static Drain-Source On-Resistance
: RDS(on) =0.18Ω(Max)
·High Power,High Speed Applications
APPLICATIONS
·Switching power supplies
·UPS
·Motor controls
·High energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
100
V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25
14
A
Total Dissipation@TC=25
75
W
Max. Operating Junction Temperature
150
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.67
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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