IRF130 View Datasheet(PDF) -
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IRF130
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRF130
100
100
14
9.9
56
±20
79
0.53
50
-55 to 175
300
260
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
BVDSS ID = 250µA, VGS = 0V (Figure 10)
100
-
-
V
VGS(TH) VDS = VGS, ID = 250µA
2.0
-
4.0
V
IDSS VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 150oC
-
-
25
µA
-
250 µA
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
14
-
-
A
IGSS VGS = ±20V
-
- ±100 nA
rDS(ON) ID = 8.3A, VGS = 10V (Figures 8, 9)
- 0.12 0.16 Ω
gts
VDS ≥ 50V, ID = 8.3A (Figure 12)
4.6 6.9
-
S
td(ON) VDD = 50V, ID ≈ 14A, RG = 12Ω, RL = 3.5Ω
-
tr
(Figures 17, 18) MOSFET Switching Times are
-
Essentially Independent of Operating Temperature
td(OFF)
-
-
30
ns
-
75
ns
-
40
ns
tf
-
-
45
ns
Qg(TOT) VGS = 10V, ID = 14A, VDS = 0.8 x Rated BVDSS,
-
18
26
nC
Ig(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge is
Qgs
Essentially Independent of Operating Temperature
-
5.5
-
nC
Qgd
-
11
-
nC
CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 11)
-
600
-
pF
COSS
-
300
-
pF
CRSS
-
100
-
pF
LD
Measured between the
Modified MOSFET
-
5.0
-
nH
Contact Screw on the
Symbol Showing the
Flange that is Closer to
Internal Device
Source and Gate Pins and Inductances
the Center of Die
D
Internal Source Inductance
LS
Measured from the Source
Lead, 6mm (0.25in) from
LD
- 12.5 -
nH
the Flange and the Source G
Bonding Pad
LS
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
RθJC
RθJA
Free Air Operation
S
-
-
1.9 oC/W
-
-
30 oC/W
2
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